{"title":"Design of high speed transimpedance amplifier for optical communication systems","authors":"Sonia Salhi, H. Escid, A. Slimane","doi":"10.1109/DAT.2017.7889191","DOIUrl":null,"url":null,"abstract":"This paper presents a low noise and high bandwidth transimpedance amplifier (TIA) for optical receiver, operating at data rate of 10 Gb/s. The first configuration of the amplifier which is the basic structure is based on push-pull inverter with resistor in feedback. However, the second configuration employs an inductor in series with a resistor in the feedback to extend the bandwidth and reduce the effect of parasitic capacitances. To optimize the input referred noise of the final design, an active device is used to replace the feedback resistor. Using 0.18 µm CMOS technology, simulation results for optimized structure show a bandwidth of 7.9 GHz, transimpedance gain of 50.8 dBΩ, and input referred noise current of 7.4 pA/√Hz.","PeriodicalId":371206,"journal":{"name":"2017 Seminar on Detection Systems Architectures and Technologies (DAT)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Seminar on Detection Systems Architectures and Technologies (DAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DAT.2017.7889191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
This paper presents a low noise and high bandwidth transimpedance amplifier (TIA) for optical receiver, operating at data rate of 10 Gb/s. The first configuration of the amplifier which is the basic structure is based on push-pull inverter with resistor in feedback. However, the second configuration employs an inductor in series with a resistor in the feedback to extend the bandwidth and reduce the effect of parasitic capacitances. To optimize the input referred noise of the final design, an active device is used to replace the feedback resistor. Using 0.18 µm CMOS technology, simulation results for optimized structure show a bandwidth of 7.9 GHz, transimpedance gain of 50.8 dBΩ, and input referred noise current of 7.4 pA/√Hz.