Characterization of metallic impurities for the ULSI fabrication process

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Pub Date : 2001-10-08 DOI:10.1109/ISSM.2001.962939

H. Sakurai, M. Iwase, A. Shimazaki, S. Nadahara

引用次数: 3

Abstract

It is one of the key points for the "Agile Fab" concept that the process equipment is shared for several processes. On the other hand, new metals tend to be applied for the latest DRAM, FeRAM and logic devices. Therefore, we investigated the behavior of these new metals to derive a protocol for "Agile-Fab." We evaluated their electrical properties and diffusion behavior. It is necessary to construct a suitable "protocol" using the result, and to control metallic contamination.

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ULSI制造过程中金属杂质的表征

“敏捷工厂”概念的关键点之一是过程设备在多个过程中共享。另一方面，新金属倾向于应用于最新的DRAM, FeRAM和逻辑器件。因此，我们研究了这些新金属的行为，以得出“Agile-Fab”的协议。我们评估了它们的电学性质和扩散行为。有必要建立一个合适的“方案”使用的结果，并控制金属污染。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)

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