Intra- and inter-wafer characterization of waveguide propagation loss and reflectivity

M. I. Reja
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引用次数: 2

Abstract

In silicon photonics, due to the increasing complexity of the device designs and the increasing density of the functions integrated on a single circuit, the precise characterization of the building blocks has become essential in order to assess the quality of the fabrication outcomes. As waveguides are the fundamental building block of photonic integrated circuits, its accurate characterization is very important to evaluate the quality of all passive elements. In this paper the characterization of two very important parameters, namely waveguide propagation loss and waveguide sidewall reflectivity, are reported for waveguides utilized inside a microring-based silicon photonic network-on-chip. Using a recently proposed method based on undercoupled all-pass microring structure, the two parameters from five differently positioned chips in two different wafers are measured in order to investigate the intra- and inter-wafer variations. Precise measurements alloalloww to define range of values and variations for these two parameters in photonic network-on-chip.
波导传播损耗和反射率的晶圆内和晶圆间表征
在硅光子学中,由于器件设计的复杂性和集成在单个电路上的功能密度的增加,为了评估制造结果的质量,构建模块的精确表征变得至关重要。由于波导是光子集成电路的基本组成部分,它的准确表征对于评价所有无源元件的质量非常重要。本文报道了微晶硅片上光子网络中波导的两个重要参数,即波导传播损耗和波导侧壁反射率的特性。采用一种基于欠耦合全通微环结构的新方法,测量了两个不同晶圆中五个不同位置芯片的两个参数,以研究晶圆内和晶圆间的变化。精确的测量允许在光子片上网络中定义这两个参数的值和变化范围。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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