Spin Relaxation Mechanisms in the Organic Semiconductor Alq3

S. Patibandla, B. Kanchibotla, S. Pramanik, Supriyo Bandyopadhyay, M. Cahay
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引用次数: 16

Abstract

We have measured the longitudinal (T1) and transverse (T2) spin relaxation times in the organic semiconductor tris(8-hydroxyquinolinolato aluminum)—also known as Alq3—at different temperatures. These measurements shed some light on the spin relaxation mechanisms in the organic. The two most likely mechanisms affecting T1 are hyperfine interactions between carrier and nuclear spins, and the Elliott-Yafet mode. On the other hand, the dominant mechanism affecting T2 of delocalized electrons in Alq3 remains uncertain, but for localized electrons (bound to defect or impurity sites), the dominant mechanism is most likely spin-phonon coupling.
有机半导体Alq3中的自旋弛豫机制
我们测量了有机半导体三(8-羟基喹啉铝)(也称为alq3)在不同温度下的纵向(T1)和横向(T2)自旋弛豫时间。这些测量结果揭示了有机物质中的自旋弛豫机制。影响T1的两个最可能的机制是载流子和核自旋之间的超精细相互作用,以及Elliott-Yafet模式。另一方面,影响Alq3中离域电子T2的主要机制仍然不确定,但对于定域电子(束缚在缺陷或杂质位点),主要机制很可能是自旋声子耦合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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