Piezoelectric films for MEMS applications

F. Xu, R. Wolf, T. Yoshimura, S. Trolier-McKinstry
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引用次数: 37

Abstract

Piezoelectric thin films offer an attractive means of sensing and actuation in microelectromechanical systems (MEMS). Relative to other means of generating motion at the microscale, piezoelectricity scales well in terms of energy density as dimensions are reduced. As a result, there is considerable motivation for utilizing such materials in miniaturized motors, switches, valves, etc. Use of ferroelectric thin films in these applications offers the possibility of increasing the sensitivity or actuation capabilities of the devices relative to alternatives such as AlN or ZnO. However, this comes at the cost of the need to integrate more difficult materials, and the introduction of appreciable temperature dependence in the response. This paper describes some of the tradeoffs associated with the use of ferroelectrics in MEMS systems. Available piezoelectric coefficients range from e/sub 31,f/ /spl sim/ -1 to -20 C/m/sup 2/. Emphasis is placed on the composition, orientation, and grain size dependence of the piezoelectric properties in lead zirconate titanate films.
用于MEMS应用的压电薄膜
压电薄膜在微机电系统(MEMS)中提供了一种有吸引力的传感和驱动手段。相对于在微尺度上产生运动的其他手段,压电在能量密度方面的尺度随着尺寸的减小而减小。因此,在小型化电机、开关、阀门等方面利用这种材料的动机相当大。在这些应用中使用铁电薄膜提供了相对于AlN或ZnO等替代品增加器件灵敏度或驱动能力的可能性。然而,这是以需要集成更困难的材料为代价的,并且在响应中引入了明显的温度依赖性。本文描述了一些与在MEMS系统中使用铁电体相关的权衡。可用的压电系数范围从e/sub / 31,f/ /spl / sim/ -1到-20 C/m/sup /。重点放在锆钛酸铅薄膜中压电性能的组成、取向和晶粒大小的依赖关系上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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