SiN used as a Stressor in Germanium-On-Insulator Substrate

Abstract

This research aims to show the advantage of using silicon nitride as a stressor in a strained germanium-on-insulator substrate (strained Ge). A Si substrate is patterned on the surface before bonding for controlling the shape and the position of strained Ge. The SiN film is deposited on Ge substrate by PE-CVD with 150 nm thick approximately. Two substrates are bonded together by surface-activation bonding with 200°C post-anneal. It was found that the tensile strain of 1.16% for the flat part and 2.03% for the bucking part, which is higher than other reported GOI using SiO2 layer.