OMVPE growth of indium phosphide nano-structures on silicon for monolithic integration

Abstract

The work deals with the growth kinetics of III-V nanostructures, particularly InP quantum dots (QDs) on Si substrates along with its growth rate. Comparing the experimentally obtained results with the existing theoretical model, the growth regime of such heterogeneous nucleation has been predicted. The estimation of the height of the QDs has been made from the dot height distribution of Atomic Force Microscopy, and it has been related to the growth rate. The experimental results establish the growth regime as mass transfer limited. Fitting the experimental data, the growth rates have been found to be in the mass transfer limited region. Efforts have been made to predict any anomaly of the growth rate at higher temperature.