Optical Properties of Lead Doped Titanium Oxide of Thin Films Prepared by Sol-Gel Method at Low Temperature

F. Abbas, R. Bensaha
{"title":"Optical Properties of Lead Doped Titanium Oxide of Thin Films Prepared by Sol-Gel Method at Low Temperature","authors":"F. Abbas, R. Bensaha","doi":"10.13189/UJMS.2019.070203","DOIUrl":null,"url":null,"abstract":"The present paper reports on the structural and optical properties of undoped and 5% Pb-doped TiO 2 thin films deposited on glass and silicon substrates prepared by the sol-gel technique have been investigated. Dip-coated thin films have been examined at different annealing temperatures (400-500℃). The results shows that Pb-doped TiO 2 thin films start to crystallize at low temperature (400℃). The morphology and surface structure of the films were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM) reveals a nanoporous structure of anatase and brookite with particle sizes ranging between 20 nm and 100 nm. Refractive index and porosity were calculated from the measured transmittance spectrum. SE study permits to determine the annealing temperature effect on the optical properties and the optical gap of the Pb-doped TiO 2 thin films. Photoluminescence (PL) spectrum revealed that emission increase with annealing temperature. A slight shift of transmission curves to higher wavelengths is observed for curves of Pb-doped TiO 2 thin films in comparison with those undoped, this was explained by the lowering of the band gap of TiO 2 .","PeriodicalId":375998,"journal":{"name":"Universal Journal of Materials Science","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Universal Journal of Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.13189/UJMS.2019.070203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

The present paper reports on the structural and optical properties of undoped and 5% Pb-doped TiO 2 thin films deposited on glass and silicon substrates prepared by the sol-gel technique have been investigated. Dip-coated thin films have been examined at different annealing temperatures (400-500℃). The results shows that Pb-doped TiO 2 thin films start to crystallize at low temperature (400℃). The morphology and surface structure of the films were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM) reveals a nanoporous structure of anatase and brookite with particle sizes ranging between 20 nm and 100 nm. Refractive index and porosity were calculated from the measured transmittance spectrum. SE study permits to determine the annealing temperature effect on the optical properties and the optical gap of the Pb-doped TiO 2 thin films. Photoluminescence (PL) spectrum revealed that emission increase with annealing temperature. A slight shift of transmission curves to higher wavelengths is observed for curves of Pb-doped TiO 2 thin films in comparison with those undoped, this was explained by the lowering of the band gap of TiO 2 .
溶胶-凝胶法制备铅掺杂氧化钛薄膜的低温光学性质
本文研究了用溶胶-凝胶法制备的未掺杂和掺5%铅的二氧化钛薄膜在玻璃和硅衬底上的结构和光学性质。在不同的退火温度(400-500℃)下对浸涂薄膜进行了研究。结果表明:掺杂pb的tio2薄膜在低温(400℃)下开始结晶;通过扫描电子显微镜(SEM)和原子力显微镜(AFM)对膜的形貌和表面结构进行了研究,发现膜的粒径在20 ~ 100 nm之间,为锐钛矿和板铜矿的纳米孔结构。根据测得的透射光谱计算折射率和孔隙率。SE研究可以确定退火温度对掺杂pb的tio2薄膜光学性能和光学间隙的影响。光致发光(PL)光谱显示,随着退火温度的升高,发光量增加。与未掺杂的tio2相比,掺杂pb的tio2薄膜的透射曲线有轻微的向更高波长偏移,这是由于tio2的带隙减小所致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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