Fabrication and characteristics of SiON/p-Si by non-vacuumed deposition technology

Abstract

The Liquid Phase Deposition (LPD) method has many advantages such as no need to perform in a vacuum environment, low cost, low process temperature, large area deposition and good step coverage. In this paper a silicon oxynitride (SiON) film was fabricated by LPD method and deposited on p-Si (100) Substrate. The films were successfully prepared by adding 8 ml of NH4OH and post deposition annealing under nitrogen atmosphere. Combining different annealing temperatures (500, 600, 700 °C), we got that the maximum Cox of 129.87 pF, k value of 7.95 and a low density of interfacial states (Dit) of 8.02 × 10¹⁰ cm^-2eV^-1 and can be obtained at an annealing temperature of 700 °C and the lowest leakage current density of 3.6 × 10^-1 A/cm² can be obtained when biased at -5 V which leads us to consider the film as a high k material that is expected to replace conventional SiO2.