A new in-situ approach to flip-chip interconnect characterization up to millimeter wave frequencies

U. Pfeiffer, A. Chandrasekhar, T. Zwick
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引用次数: 3

Abstract

In this paper we present the performance of flip-chip interconnects up to 40 GHz based on an alternative non-destructive measurement technique. The presented method unfolds the raw flip-chip interconnect, excluding any launch structures for an actually mounted silicon chip. A preliminary modeling approach for chip-package co-design is outlined.
一种新的毫米波频率倒装互连表征的原位方法
在本文中,我们提出了一种替代的非破坏性测量技术的倒装芯片互连高达40 GHz的性能。所提出的方法展开了原始的倒装芯片互连,不包括实际安装的硅芯片的任何发射结构。概述了芯片封装协同设计的初步建模方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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