Temperature-dependent small-signal and power and noise characterization of GaAs power FETs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964385

E. Gebara, S. Nuttinck, M. R. Murti, D. Heo, M. Harris, J. Laskar

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引用次数: 2

Abstract

We present a complete on-wafer characterization of a GaAs power MESFET (L/sub g/=0.6 /spl mu/m, W/sub g/=300 /spl mu/m) at various temperature of operation. DC-IV, small-signal, power and noise parameters measurements are achieved at temperatures from 18 K to 300 K. The transition between small-signal and large-signal mode of operation is studied, highlighting the importance of load-pull measurements, and the caution that must be considered when applying small-signal results to large-signal mode of operation. Power measurements were achieved at an optimal bias condition to take into account the positive Temperature Coefficient (TC) that the On Breakdown Voltage exhibits. Results demonstrate performance improvements, when the device operates at reduced lattice temperature, in output power, power-added efficiency, intermodulation products and noise parameters. This analysis technique provides a path for developing robust temperature dependent large-signal models.

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温度相关的GaAs功率场效应管的小信号和功率及噪声特性

我们给出了在不同工作温度下GaAs功率MESFET (L/sub g/=0.6 /spl mu/m, W/sub g/=300 /spl mu/m)的完整片上表征。DC-IV，小信号，功率和噪声参数测量可在18 K至300 K的温度下实现。研究了小信号和大信号工作模式之间的转换，强调了负载-拉力测量的重要性，以及将小信号结果应用于大信号工作模式时必须考虑的注意事项。功率测量是在考虑到导通击穿电压显示的正温度系数(TC)的最佳偏置条件下实现的。结果表明，当器件在降低晶格温度下工作时，在输出功率、功率附加效率、互调产物和噪声参数方面都有性能改善。这种分析技术为建立鲁棒的温度相关大信号模型提供了途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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