Double-Gate Junctionless GNRFETs Operating in the BTBT Regime: A Simple Design with Improved Performance for Low-Power Applications

Abstract

In this paper, the pocket-induced barrier technique is employed to improve the performance of band-to-band tunneling (BTBT) double gate (DG) junctionless (JL) graphene nanoribbon (GNR) field-effect transistors (FETs). The idea is invested using the non-equilibrium Green’s function formalism in order to accurately consider the main quantum mechanisms that affect the BTBT carbon nanoribbon/nanotube (CNR/CNT) FETs. It has been found that the approach based on the lightly doped pocket-induced barrier is efficient in enhancing the BTBT JL-GNRFET in terms of off-current, on-current, current ratio, sub-60 swing factor, leakage current, and the ambipolar behavior. The obtained results indicate that the GNR/CNT-based BTBT JLFETs can be very interesting devices for the advanced nanoelectronics that count on high-performance, low-power, small-size, and low-cost nanodevices.