Mobility enhancement in (110)-oriented ultra-thin-body single-gate and double-gate SOI MOSFETs

Abstract

Mobility enhancement of both electron and hole is experimentally demonstrated in (110) ultra-thin-body SOI MOSFETs. Single-gate operation and double-gate operation are also compared. Hole mobility enhancement in the single-gate operation is achieved by the suppression of phonon scattering, while electron mobility enhancement in double-gate operation is achieved by volume inversion. Based on the experimental results, the best device structure for highest CMOS circuit performance in future has been discussed.