Warm-Boot Attack on Modern DRAMs

Yichen Jiang, Shuo Wang, Renato Figueiredo, Yier Jin
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Abstract

Memory plays a critical role in storing almost all computation data for various applications, including those with sensitive data such as bank transactions and critical business management. As a result, protecting memory security from attackers with physical access is ultimately important. Various memory attacks have been proposed, among which “cold boot” and RowHammer are two leading examples. DRAM manufacturers have deployed a series of protection mechanisms to counter these attacks. Even with the latest protection techniques, DRAM may still be vulnerable to attackers with physical access. In this paper, we proposed a novel “warm boot” attack which utilizes external power supplies to bypass the existing protection mechanisms and steal the data from the modern SODIMM DDR4 memory. The proposed “warm boot” attack is applied to various DRAM chips from different brands. Based on our experiments, the “warm boot” attack can achieve as high as 94% data recovery rate from SODIMM DDR4 memory.
现代dram的热启动攻击
内存在存储各种应用程序的几乎所有计算数据方面起着关键作用,包括那些具有敏感数据(如银行事务和关键业务管理)的应用程序。因此,保护内存安全免受具有物理访问的攻击者的攻击是非常重要的。各种各样的内存攻击被提出,其中“冷启动”和RowHammer是两个主要的例子。DRAM制造商已经部署了一系列保护机制来应对这些攻击。即使采用最新的保护技术,DRAM仍然容易受到物理访问的攻击者的攻击。在本文中,我们提出了一种新的“热启动”攻击,利用外部电源绕过现有的保护机制,从现代SODIMM DDR4存储器中窃取数据。提出的“热启动”攻击适用于不同品牌的各种DRAM芯片。根据我们的实验,“热启动”攻击可以从SODIMM DDR4内存中获得高达94%的数据恢复率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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