{"title":"Electronically tunable and switchable filters using microstrip ring resonator circuits","authors":"T. Martin, F. Wang, K. Chang","doi":"10.1109/MWSYM.1988.22154","DOIUrl":null,"url":null,"abstract":"Two microstrip ring resonator circuits are described: an electrically switchable filter and a tunable switchable filter, both using p-i-n diodes. In the first circuit, a microstrip ring resonator loaded with two p-i-n diodes is developed as a switchable filter. By replacing one p-i-n diode with a varactor diode, the switchable filter is made electronically tunable. Over 20-dB isolation with 9% tuning bandwidth has been demonstrated. Equivalent circuits have been developed for both circuits. The analysis was based on the transmission-line model including the effects of diode parasitics, coupling gaps, dispersion, and mounting gap capacitance. The experimental results agree very well with the theoretical calculation.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Two microstrip ring resonator circuits are described: an electrically switchable filter and a tunable switchable filter, both using p-i-n diodes. In the first circuit, a microstrip ring resonator loaded with two p-i-n diodes is developed as a switchable filter. By replacing one p-i-n diode with a varactor diode, the switchable filter is made electronically tunable. Over 20-dB isolation with 9% tuning bandwidth has been demonstrated. Equivalent circuits have been developed for both circuits. The analysis was based on the transmission-line model including the effects of diode parasitics, coupling gaps, dispersion, and mounting gap capacitance. The experimental results agree very well with the theoretical calculation.<>