High quality lattice-mismatched In/sub 0.82/Ga/sub 0.18/As layer grown on InP substrate

Abstract

The improvement resulting from the use of a graded buffer layer in the quality of In/sub 0.82/Ga/sub 0.18/As layers grown on an InP substrate is reported. Results of Hall effect measurements and of transmission electron microscopy, X-ray diffraction studies, and photoluminescence studies are described. For a graded buffer layer thicker than 2 mu m, Hall mobility values as high as 20300 cm/sup 2/ V/sup -1/ s/sup -1/ have been measured at room temperature with a dislocation density of about 5*10/sup 6/ cm/sup -2/.<>