Dynamic and Noise Performances of the Nothing On Insulator Device

Abstract

This paper studies dynamic and noise simulations of an alternative tunnel transistor that is composed of the semiconductor/vacuum/ semiconductor succession on insulator. The body of the device is the vacuum zone that is equivalent to Nothing On Insulator (NOI). The conduction mechanisms were approbated to be the Fowler-Nordheim tunneling as reported in previous papers. Dynamic and noise regimes rather suggest the NOI applications at high frequencies: capacitances of 3÷7×10−17F/µm and reduced noise.