Total dose effects in the auger transistor

Abstract

The total dose effects in the Auger Tunnel Emitter Transistor (Auger TETRAN) have been experimentally investigated. It was established, that DC characteristic i.e. the collector current and the current gain coefficient are sufficiently degraded under (gamma) -rays irradiation over 5.106 rad(Si). An unusual non-monotonous behavior of the DC characteristic was also observed at a low collector voltage.