A Non-Closed-Form Mathematical Model for Uniform and Non-Uniform Distributed Amplifiers

Mohamad EL Chaar, Antonio A. L. de Souza, M. Barragán, F. Podevin, S. Bourdel
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引用次数: 1

Abstract

A non-closed-form general mathematical model for CMOS distributed amplifier (DA) for broadband applications is presented. Contrary to the artificial transmission line (TL) assumption made in the conventional analytical models, the proposed model treats the DA as a discrete set of cells connected together, and hence considers propagation and mismatch between inter-cells. This approach provides designers with a much more accurate first sizing of the DA compared to conventional ways and, as a result, leads to a reduced design time and complexity. The model enables both quantitative and qualitative analysis of a DA, for the purpose of aiding the designers in predicting the relations between DA performance and its multi-design parameters, especially in the context of non-uniform designs. In addition, it is well suited to Computer-Automated Design (CAutoD), to help in achieving designs having a given set of performance goals. The validation of the model is demonstrated on two designs, by a comparison with simulations done in Keysight’s ADS tool and using STMicroelectronics’ 55-nm SiGe BiCMOS design kit. First design is inspired from an already published non-uniform DA design while second one proposes a 100-GHz bandwidth CMOS uniform DA with 8 dB of power gain, after using it in a CAutoD process.
均匀和非均匀分布放大器的非封闭数学模型
提出了用于宽带应用的CMOS分布式放大器(DA)的非封闭通用数学模型。与传统分析模型中人工传输线(TL)的假设相反,该模型将DA视为连接在一起的离散单元集,因此考虑了单元间的传播和不匹配。与传统方法相比,这种方法为设计人员提供了更准确的DA初始尺寸,从而减少了设计时间和复杂性。该模型可以对数据分析进行定量和定性分析,以帮助设计人员预测数据分析性能与其多设计参数之间的关系,特别是在非均匀设计的情况下。此外,它非常适合于计算机自动设计(CAutoD),以帮助实现具有给定性能目标集的设计。通过与Keysight的ADS工具和意法半导体(STMicroelectronics)的55纳米SiGe BiCMOS设计套件的仿真比较,在两个设计中验证了该模型的有效性。第一个设计的灵感来自于已经发表的非均匀DA设计,而第二个设计提出了100 ghz带宽CMOS均匀DA,功率增益为8 dB,在CAutoD工艺中使用后。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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