A Design of Inverse Class-J Power Amplifier using Varactor Diode for 4G Communication Systems

2018 IEEE 10th International Conference on Humanoid, Nanotechnology, Information Technology,Communication and Control, Environment and Management (HNICEM) Pub Date : 2018-11-01 DOI:10.1109/HNICEM.2018.8666289

J. Hora, Krisha Dawn J. Dura, Chrizia Mae B. Nabua, Robert T. Nericua, O. J. Gerasta, E. Dutkiewicz, Zhu Xi

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Abstract

A Class-J Power Amplifier is designed with a varactor diode on its input matching network to improve its efficiency. To enhance the efficiency of the designed power amplifier, it is operated in inverse mode. The design, simulation, and layout generation of the circuits are implemented using the Advance Design System Tool of Keysight. Although GaN devices are known to have better performance than GaAs devices, a GaAs FET is still used as the active device for the designed power amplifier as it is more reliable compared to GaN devices. This design of Class-J power amplifier in inverse mode with varactor diode exhibits a higher power output, gain and efficiency of 30.14 dBm, 8. 14dB and 90.84%, respectively, in comparison to existing class-J power amplifier with power output of 24–27dBm, gain of 7–10 dB and efficiency of 50–5S% only. Using a One Tone Harmonic Balance Simulation for a 2GHz fundamental frequency, the resulting fundamental output power is 30. 475dBm, a transducer power gain of 6.175, a PAE of 26.943 and a gain compression of 12. 602dB. The designed power amplifier is ready to be fabricated on a Monolithic Microwave Integrated Circuit (MMIC).

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基于变容二极管的4G通信系统反j类功率放大器设计

为提高j类功率放大器的工作效率，在其输入匹配网络上设计了变容二极管。为了提高设计的功率放大器的效率，将其工作在反向模式。电路的设计、仿真和版图生成使用是德科技的高级设计系统工具实现。虽然已知GaN器件比GaAs器件具有更好的性能，但由于与GaN器件相比，GaAs场效应管更可靠，因此仍然用作设计功率放大器的有源器件。采用变容二极管设计的反模j类功率放大器具有较高的输出功率、增益和效率，达到30.14 dBm。功率输出为24 ~ 27dbm，增益为7 ~ 10db，效率仅为50 ~ 5s的j类功率放大器，分别为14dB和90.84%。对2GHz基频进行单音谐波平衡仿真，得到的基频输出功率为30。475dBm，换能器功率增益为6.175,PAE为26.943，增益压缩为12。602分贝。所设计的功率放大器已准备好在单片微波集成电路(MMIC)上制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE 10th International Conference on Humanoid, Nanotechnology, Information Technology,Communication and Control, Environment and Management (HNICEM)

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