Antenna coupled GaN-based pulsed THz emitter array, enhanced with nano-slit plasmonic waveguide modes

Pouya Torkaman, S. Darbari, M. J. Mohammad-Zamani, M. Heidari, Erfan Dejband
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引用次数: 2

Abstract

An array of unbiased pulsed GaN-based terahertz emitters based on excitation of different waveguide modes in the metallic contact grating is proposed and simulated for the first time. The proposed emitter consists asymmetric metal semiconductor-metal, so dissimilar Schottky contacts induce internal electric field that accelerates the photogenerated carriers. Furthermore, by taking advantage of plasmonic cavity modes for specific dimensions of the emitter array, it is shown that THz photocurrent can be enhanced about 5 times in comparison with the unbiased emitter array of the same area. We demonstrate that, for appropriate dimensions of the top metal contact in such a THz emitter array, the first order guided modes of the sub-wavelength nano-slit waveguides will be formed between two adjusted metal contacts, which leading to an enhanced optical absorption and the consequent THz photocurrent in the active region. Finally, we have designed a THz antenna with maximum gain of 6.5, and bandwidth of 400 GHz, which is coupled to the proposed THz emitter array to improve the output radiation power.
天线耦合氮化镓基脉冲太赫兹发射极阵列,纳米狭缝等离子波导模式增强
提出了一种基于金属接触光栅中不同波导模式激励的无偏脉冲氮化镓基太赫兹发射器阵列,并进行了首次仿真。所提出的发射极由不对称的金属半导体-金属组成,因此不同的肖特基触点会产生内部电场,从而加速光生成的载流子。此外,通过利用特定尺寸的等离子体腔模式,表明与相同面积的无偏射极阵列相比,太赫兹光电流可以增强约5倍。我们证明,在这种太赫兹发射极阵列中,对于适当尺寸的顶部金属触点,将在两个调整的金属触点之间形成亚波长纳米狭缝波导的一阶导模,从而导致增强的光吸收和随之产生的太赫兹光电流在有源区域。最后,我们设计了一个最大增益为6.5,带宽为400 GHz的太赫兹天线,并将其耦合到所提出的太赫兹发射极阵列中,以提高输出辐射功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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