Band structures and density of state of Ge/GeSiSn type-I quantum wells

Southeast Asian International Advances in Micro/Nano-technology Pub Date : 2010-03-25 DOI:10.1117/12.861346

W. Fan

引用次数: 0

Abstract

The band structures and density of state of tensile strained Ge/GeSiSn QWs with different Sn composition are investigated by using 6-band k.p method. The band lineups of Ge/GeSiSn are given. The hole energy dispersion curves and density of state are calculated. The results are helpful for Si photonics device design.

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Ge/GeSiSn i型量子阱的能带结构和态密度

采用6波段kp法研究了不同Sn组成的拉伸应变Ge/GeSiSn量子阱的能带结构和态密度。给出了Ge/GeSiSn的波段排列。计算了空穴能量色散曲线和态密度。研究结果对硅光子器件的设计有一定的指导意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Southeast Asian International Advances in Micro/Nano-technology

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