Electron and Phonon Tranports in a 3D FinFET Transistor

Abstract

The switch from planar MOSFET to 3-D FinFET technology is one of the best choices to enhance electric performance, even though this switch could damage the transistor due to Self-Heating effect (SHE). In this paper, an electro-thermal model is developed by combining the ballistic-diffusive equation or BDE-model and the drift-diffusion (D-D) model to evaluate the electric and thermal aspects of 14-nm Bulk and SOI FinFET devices. By giving comparisons of the IDS-VGS aspects of our presented work with experimental results reported by HP and INTEL laboratories and numerical data given by TCAD simulators, the validity of the electrical part is verified. Thermal results are also improved by giving comparisons of our thermal characteristics with those obtained by TCAD simulators. The results analysis reveals that the temperature rises slowly in the case of Bulk FinFET comparing to SOI FinFET.