SPICE model parameters extraction taking into account the ionizing radiation effects

Abstract

Universal SPICE macro-model of Si bipolar junction transistor (BJT) and SiGe heterojunction bipolar transistor (HBT) taking into account total irradiation dose effects is presented. A method of macro-model radiation-dependent parameters extraction from the measured data is described. The advantage of the proposed method is simplicity of parameter definition. Simulated and measured transistor characteristics are in a good agreement.