Thermal stresses in the bulk and epitaxial growth of III-V materials

Abstract

Summary form only given. Large temperature gradients and substantial differences in thermal expansion coefficients are among the major factors for thermal stress generation in many materials systems. The field of electronic materials provides striking illustrations with regard to the role of thermal stress in crystal growth. In the LEC (liquid encapsulation Czochralski) growth of GaAs and InP, the current understanding of dislocation generation is based on the quasi-steady state (QSS) heat transfer/thermal stress model. The theory not only yields correctly the observed dislocation patterns of