{"title":"A Miniaturized Dual-Band Stacked Structure Antenna Design","authors":"Liang Chen, Huizhu Zhu, Guangchi Xie, Peng Yang","doi":"10.1109/ITOEC53115.2022.9734346","DOIUrl":null,"url":null,"abstract":"This letter describes the construction of a dual circularly polarized satellite navigation microstrip antenna that operates in the B2b and L bands of BDS. The unit is a double-fed double-layer laminated structure, with miniaturization achieved through high dielectric constant and thick dielectric thickness; the isolation between the ports is improved by fitting a ring of metal holes surrounding the probes leading to the top patch; impedance matching is accomplished through the inclusion of a C-shaped slot loaded in the top patch. The simulation results show the isolation between the ports is ${S_{21}\\,<\\, - 26dB}$ (1.196~1.217GHz) and ${S_{21}\\,<\\, - 20.2dB}$ (1.611~1.627GHz); At 1.207 and 1.62GHz, RHCP gain of 5.12 dB and LHCP gain of 5.92 dB are also observed.","PeriodicalId":127300,"journal":{"name":"2022 IEEE 6th Information Technology and Mechatronics Engineering Conference (ITOEC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 6th Information Technology and Mechatronics Engineering Conference (ITOEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITOEC53115.2022.9734346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This letter describes the construction of a dual circularly polarized satellite navigation microstrip antenna that operates in the B2b and L bands of BDS. The unit is a double-fed double-layer laminated structure, with miniaturization achieved through high dielectric constant and thick dielectric thickness; the isolation between the ports is improved by fitting a ring of metal holes surrounding the probes leading to the top patch; impedance matching is accomplished through the inclusion of a C-shaped slot loaded in the top patch. The simulation results show the isolation between the ports is ${S_{21}\,<\, - 26dB}$ (1.196~1.217GHz) and ${S_{21}\,<\, - 20.2dB}$ (1.611~1.627GHz); At 1.207 and 1.62GHz, RHCP gain of 5.12 dB and LHCP gain of 5.92 dB are also observed.