Systematic Investigation Of The Neutron Irradiation Effects On The Performances Of FZ And MCZ Silicon Detectors

Abstract

Float-Zone (FZ) and Magnetic-Czochralski (MCZ) silicon detectors were irradiated with fast neutron fluences larger than 1013n/cm2). The charge collection efficiency I ef f ) dependence on reverse bias voltage (VB) and on fluence (a) were investigated for both types of detectors. The (eff) dependence on VB, for FZ and MCZ detectors, shows that the relation between charge carrier concentration and full depletion voltage does not obey the standard equation for an unsymmetrical step junction. eff is found to have a logarithmic dependence on 0 for both types of detectors.