A GaN MMIC HPA with 50W Output Power and 50% PAE for S-Band Radar Systems

Abstract

This paper presents the experimental results of a monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) in Gallium Nitride (GaN) technology conceived for S-Band active electronically scanned array systems. The MMIC is based on a three-stage architecture and it is realized in a commercially available $0.25 \mu m$ GaN process. The HPA provides an output power higher than 50W with an associated gain and a power added efficiency greater than 34dB and 50%, respectively, in a fractional bandwidth larger than 15%. The overall chip area is limited to 6x5.4 mm2.