Zihao Xiang, Shiying Han, Bo Liu, Huyang Peng, Zixiong Wang, Guiling Sun
{"title":"Design and Analysis of a PMOS RF-DC Conversion Circuit at UHF for Ambient Energy Harvesting","authors":"Zihao Xiang, Shiying Han, Bo Liu, Huyang Peng, Zixiong Wang, Guiling Sun","doi":"10.1109/ICCChinaW.2019.8849957","DOIUrl":null,"url":null,"abstract":"A PMOS RF-DC conversion circuit design for ambient energy harvesting (AEH) at UHF is presented in this paper. The output voltage and power conversion efficient (PCE) of the circuit are theoretically derived, which provides guideline for choosing the parameters of PMOS. We simulate the circuit with Multisim by varying the input RF power level from −40 dBm (0.1 µW) to −3 dBm (0.5 mW) at 2.45 GHz. The theoretical analysis is verified by the simulation results, and we can observe a 82.85% PCE, 0.11% ripple factor and −15 dBm (31.62 µW) sensitivity with 1.62 V output voltage on a 100 kΩ load resistance, which outperforms the Schottky diode based conversion circuit.","PeriodicalId":252172,"journal":{"name":"2019 IEEE/CIC International Conference on Communications Workshops in China (ICCC Workshops)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE/CIC International Conference on Communications Workshops in China (ICCC Workshops)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCChinaW.2019.8849957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A PMOS RF-DC conversion circuit design for ambient energy harvesting (AEH) at UHF is presented in this paper. The output voltage and power conversion efficient (PCE) of the circuit are theoretically derived, which provides guideline for choosing the parameters of PMOS. We simulate the circuit with Multisim by varying the input RF power level from −40 dBm (0.1 µW) to −3 dBm (0.5 mW) at 2.45 GHz. The theoretical analysis is verified by the simulation results, and we can observe a 82.85% PCE, 0.11% ripple factor and −15 dBm (31.62 µW) sensitivity with 1.62 V output voltage on a 100 kΩ load resistance, which outperforms the Schottky diode based conversion circuit.