Performance Evaluation of p-GaN Gate Enhancement Mode HEMT with Back Barriers

Abstract

The effect of InGaN and p-GaN back barrier layers on the electrical characteristics of a p-GaN gate based enhancement mode HEMT is investigated in this work. A comparative analysis on the performance of back barrier based HEMT, with that of a conventional device is performed. The impact of mole fraction and doping of back barrier on device behaviour is analysed. The scope of back barrier design on device threshold voltage engineering is highlighted. The insertion of back barrier layer helps to increase carrier confinement and can be suitably adopted as a solution for short channel effects found in scaled devices.