{"title":"On-chip ESD protection design by using polysilicon diodes in CMOS technology for smart card application","authors":"Tai-Ho Wang, M. Ker","doi":"10.1109/EOSESD.2000.890086","DOIUrl":null,"url":null,"abstract":"A novel on-chip ESD protection design using polysilicon diodes for a smart card application is reported in this paper. By adding an efficient V/sub DD/-to-V/sub SS/ clamp circuit, the HBM ESD level of the smart card IC with polysilicon diodes as the ESD protection devices have been successfully improved from the original /spl sim/300 V to become /spl ges/3 kV. Different process splits have been experimentally evaluated to find a suitable doping concentration for optimization of the polysilicon diodes for both smart card application and on-chip ESD protection design.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A novel on-chip ESD protection design using polysilicon diodes for a smart card application is reported in this paper. By adding an efficient V/sub DD/-to-V/sub SS/ clamp circuit, the HBM ESD level of the smart card IC with polysilicon diodes as the ESD protection devices have been successfully improved from the original /spl sim/300 V to become /spl ges/3 kV. Different process splits have been experimentally evaluated to find a suitable doping concentration for optimization of the polysilicon diodes for both smart card application and on-chip ESD protection design.