Aging mechanisms of X2 metallized film capacitors in a high temperature and humidity environment

Hua Li, P. Lewin, J. Fothergill
{"title":"Aging mechanisms of X2 metallized film capacitors in a high temperature and humidity environment","authors":"Hua Li, P. Lewin, J. Fothergill","doi":"10.1109/ICD.2016.7547738","DOIUrl":null,"url":null,"abstract":"Safety capacitors (usually denoted as X1, X2 or Y) are metallized film capacitors (MFC). Two kinds of capacitance loss mechanism typically occur in this metallized film structure: (1) caused by self-healing resulting in a very small electrode area loss; (2) caused by electrode oxidation by electrochemical corrosion under ac stress in a humid environment. This study focuses on the aging mechanism of X2 film capacitors working in high temperature and high humidity environments. Two types of X2 film capacitors have been stressed under an applied voltage of 270Vac at 85 ¼C, 78.68%RH. Capacitance and equivalent series resistance (ESR) were monitored during the experiment as parametric parameters that reflect the aging process. The aging mechanism including moisture ingress time were calculated and comprehensively analyzed with the capacitance change characteristics. It was found that capacitors with lower aluminum metallization has a better capacitance stability, the mean corrosion rate of Type2 (9.7% aluminum metallization) is more than 3 times of the Type1(6.9% aluminum metallization).The ingress time calculated by capacitance change and normalized ESR show reasonable agreement.","PeriodicalId":306397,"journal":{"name":"2016 IEEE International Conference on Dielectrics (ICD)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Dielectrics (ICD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICD.2016.7547738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

Abstract

Safety capacitors (usually denoted as X1, X2 or Y) are metallized film capacitors (MFC). Two kinds of capacitance loss mechanism typically occur in this metallized film structure: (1) caused by self-healing resulting in a very small electrode area loss; (2) caused by electrode oxidation by electrochemical corrosion under ac stress in a humid environment. This study focuses on the aging mechanism of X2 film capacitors working in high temperature and high humidity environments. Two types of X2 film capacitors have been stressed under an applied voltage of 270Vac at 85 ¼C, 78.68%RH. Capacitance and equivalent series resistance (ESR) were monitored during the experiment as parametric parameters that reflect the aging process. The aging mechanism including moisture ingress time were calculated and comprehensively analyzed with the capacitance change characteristics. It was found that capacitors with lower aluminum metallization has a better capacitance stability, the mean corrosion rate of Type2 (9.7% aluminum metallization) is more than 3 times of the Type1(6.9% aluminum metallization).The ingress time calculated by capacitance change and normalized ESR show reasonable agreement.
高温高湿环境下X2金属化薄膜电容器老化机理研究
安全电容器(通常用X1、X2或Y表示)是金属化薄膜电容器(MFC)。在这种金属化薄膜结构中,电容损耗机制通常有两种:(1)由于自愈导致电极面积损失很小;(2)在潮湿环境下交流应力作用下电极氧化引起的电化学腐蚀。本文主要研究X2薄膜电容器在高温高湿环境下的老化机理。两种类型的X2薄膜电容器在施加电压为270Vac, 85¼C, 78.68%RH的条件下受力。在实验过程中监测电容和等效串联电阻(ESR)作为反映老化过程的参数。计算并综合分析了老化机理,包括吸湿时间和电容变化特性。结果表明,铝金属化程度较低的电容器具有较好的电容稳定性,2型(铝金属化程度为9.7%)的平均腐蚀速率是1型(铝金属化程度为6.9%)的3倍以上。电容变化计算的进入时间与归一化ESR计算的进入时间吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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