Conductive EMI Modeling of Half-Bridge GaN Power Stage

Abstract

Analysis of the conductive electromagnetic interferences (EMI) of the Half-bridge GaN development board EPC9062 is described. An equivalent circuit of the power stage and its mathematical model as a source of EMI is proposed. The modeling is performed in the range from 150 kHz to 30 MHz. The influence of the Common Mode component on the overall EMI level with an increasing of the switching frequency is analyzed. The graphs of the calculated and experimental EMI at the line impedance stabilization network (LISN) output are built. Experimental results and calculated ones are well matched.