K. Rim, E. Gusev, C. D'Emic, T. Kanarsky, H. Chen, J. Chu, J. Ott, K. Chan, D. Boyd, V. Mazzeo, B. Lee, A. Mocuta, J. Welser, S. Cohen, M. Leong, H.-S.P. Wong
{"title":"Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics","authors":"K. Rim, E. Gusev, C. D'Emic, T. Kanarsky, H. Chen, J. Chu, J. Ott, K. Chan, D. Boyd, V. Mazzeo, B. Lee, A. Mocuta, J. Welser, S. Cohen, M. Leong, H.-S.P. Wong","doi":"10.1109/VLSIT.2002.1015368","DOIUrl":null,"url":null,"abstract":"Integration of strained Si and high-K gate dielectric is demonstrated for the first time. While providing a >1000/spl times/ gate leakage reduction, strained Si NMOSFETs with HfO/sub 2/ gate dielectric exhibit 60% higher mobility than the unstrained Si device with HfO/sub 2/ gate dielectrics, and 30% higher mobility than the conventional Si NMOSFETs with SiO/sub 2/ gate dielectric (universal MOSFET mobility).","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015368","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
Integration of strained Si and high-K gate dielectric is demonstrated for the first time. While providing a >1000/spl times/ gate leakage reduction, strained Si NMOSFETs with HfO/sub 2/ gate dielectric exhibit 60% higher mobility than the unstrained Si device with HfO/sub 2/ gate dielectrics, and 30% higher mobility than the conventional Si NMOSFETs with SiO/sub 2/ gate dielectric (universal MOSFET mobility).