{"title":"Die attachment Process Overview for High Power Semiconductors","authors":"M. Myśliwiec, R. Kisiel","doi":"10.1109/ISSE57496.2023.10168484","DOIUrl":null,"url":null,"abstract":"The article reviews the most common assembly techniques: soldering, solid-liquid interdiffusion (SLID) bonding and sintering used to assemble high power semiconductors. The review of techniques has been supplemented by own research dedicated to the modification of sintering techniques based on Ag paste with a small addition of resin. The following criteria were used: adhesion and thermal properties. It was found that using a two-step pressureless sintering process: drying at 60°C for 10 min, place chip on hot paste and sintering at 175°C for 30 min, good adhesion (>10MPa) and low joint thermal resistance (less than 0.1 KW) can be achieved.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"1916 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSE57496.2023.10168484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The article reviews the most common assembly techniques: soldering, solid-liquid interdiffusion (SLID) bonding and sintering used to assemble high power semiconductors. The review of techniques has been supplemented by own research dedicated to the modification of sintering techniques based on Ag paste with a small addition of resin. The following criteria were used: adhesion and thermal properties. It was found that using a two-step pressureless sintering process: drying at 60°C for 10 min, place chip on hot paste and sintering at 175°C for 30 min, good adhesion (>10MPa) and low joint thermal resistance (less than 0.1 KW) can be achieved.