A two stage, monolithic integrated 200 mW HEMT amplifier for wireless ATM

Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194) Pub Date : 1998-08-09 DOI:10.1109/RAWCON.1998.709152

T. A. Bos, U. Lott, W. Bachtold

引用次数: 1

Abstract

For wireless LAN applications a compact two stage HEMT amplifier is designed and on-wafer measured with on-chip matching and bias networks. At 17.2 GHz the amplifier delivers 23.1 dBm saturated output power from a 3.3 V supply. At the 1 dB compression point of 20.4 dBm the amplifier has 13.1 dB gain. Measured performance of the amplifier proves the applicability up to 20 GHz. The amplifier having a low output reflection coefficient is suitable as driver stage for amplifiers with higher power outputs.

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用于无线ATM的两级单片集成200mw HEMT放大器

对于无线局域网应用，设计了一种紧凑的两级HEMT放大器，并使用片上匹配和偏置网络在片上进行测量。在17.2 GHz时，放大器通过3.3 V电源提供23.1 dBm的饱和输出功率。在20.4 dBm的1db压缩点，放大器的增益为13.1 dB。经测试，该放大器的工作频率可达20 GHz。具有低输出反射系数的放大器适合作为高输出功率放大器的驱动级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194)

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