Lateral Channel Doping Engineering in 0.1um Recessed Channel nMOSFETs

Abstract

Many researchers have reported the characteristics of 0.1μm nMOSFETs using vertical channel doping engineering[1] and drain engineering in planar and groove gate(elevated S/D)[2] structures. But there has not been an extensive study on the channel doping engineering in the lateral direction of 0.1μm channel length. In this paper, by simulation and fabrication, we have shown that the laterally graded channel doping profile has a strong influence on the device performance and short channel effect in 0.1μm recessed channel structure for the first time.