Interface characterization in fully depleted SOI MOSFETs by dynamic transconductance

Abstract

The interface characterization for very thin (fully depleted) SOI (silicon-on-insulator) layers is addressed. A new technique, dynamic transconductance, has recently been developed for bulk MOSFETs and exhibited important advantages. The technique has been successfully adapted to partially depleted and depletion mode SOI MOSFETs. A model for the application of the dynamic transconductance technique in fully depleted SOI MOSFETs is developed, and the experimental conditions are described. A demonstration of the validity of the model is given by applying the technique to study fully developed SIMOX (separation by implantation of oxygen) MOSFETs.<>