Experimental Investigation on the Bias and Temperature Dependence of the Forward Transmission Coefficient for HEMT Technologies

Abstract

The goal of this research is to look at the effects of temperature on the forward transmission coefficient (S21) of high electron-mobility transistors (HEMTs), employing various technologies. The analysis is carried out on six different devices under different bias conditions with the ambient temperature varied from -40°C to 150°C. The low-frequency magnitude of S21 is significantly reduced in GaN-based HEMTs when the temperature is increased. On the other hand, an operating bias point where this magnitude is temperature insensitive has been identified in GaAs-based HEMTs.