Design of an 85–95-GHz differential amplifier in 28-nm CMOS FDSOI

A. Vahdati, M. Varonen, D. Parveg, D. Karaca, K. Halonen
{"title":"Design of an 85–95-GHz differential amplifier in 28-nm CMOS FDSOI","authors":"A. Vahdati, M. Varonen, D. Parveg, D. Karaca, K. Halonen","doi":"10.1109/GSMM.2016.7500302","DOIUrl":null,"url":null,"abstract":"This paper presents the design and measurement results of a W-band two-stage differential amplifier using transformers in 28-nm CMOS FDSOI. At 90 GHz, the amplifier achieves 13.8 dB gain, and the input and output return loss are -8.0 dB and -11 dB, repectively. The amplifier obtains +5 dBm saturated output power and 1-dB output compression point of 0 dBm at the centre frequency. From 85 to 95 GHz, the gain is better than 12.3 dB and the average noise figure (NF) is 8 dB. The design consumes 37.5 mW power from a 1-V supply and the active area of the design is 0.017 mm2.","PeriodicalId":156809,"journal":{"name":"2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2016.7500302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

This paper presents the design and measurement results of a W-band two-stage differential amplifier using transformers in 28-nm CMOS FDSOI. At 90 GHz, the amplifier achieves 13.8 dB gain, and the input and output return loss are -8.0 dB and -11 dB, repectively. The amplifier obtains +5 dBm saturated output power and 1-dB output compression point of 0 dBm at the centre frequency. From 85 to 95 GHz, the gain is better than 12.3 dB and the average noise figure (NF) is 8 dB. The design consumes 37.5 mW power from a 1-V supply and the active area of the design is 0.017 mm2.
基于28纳米CMOS FDSOI的85 - 95 ghz差分放大器设计
本文介绍了一种基于28纳米CMOS FDSOI的w波段两级差分放大器的设计和测量结果。在90 GHz时,放大器的增益为13.8 dB,输入和输出回波损耗分别为-8.0 dB和-11 dB。该放大器在中心频率处获得+5 dBm的饱和输出功率和0 dBm的1 db输出压缩点。在85 ~ 95 GHz范围内,增益优于12.3 dB,平均噪声系数(NF)为8 dB。该设计从1 v电源消耗37.5 mW功率,设计的有效面积为0.017 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信