A 1-GS/s 8-Bit 12.01-fJ/conv.-step Two-Step SAR ADC in 28-nm FDSOI Technology

Q. Fan, Jinghong Chen
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Abstract

This letter presents a partially interleaved 1-GS/s 8-bit two-step SAR ADC for low-power operations. A fast noise-reduction technique is proposed to increase the power efficiency without significant degradation of the conversion rate. A modified StrongARM latch is adopted to further reduce the comparator noise. A calibration procedure runs in the background to address the nonuniform comparator offsets and the interstage gain error. Fabricated in a 28-nm FDSOI process, the prototype ADC achieves an SNDR of 46.65 dB at Nyquist with a power consumption of 2.1 mW, leading into a Walden FOM of 12.01 fJ/conv.-step.
1-GS/s 8位12.01-fJ/转换器。采用28纳米FDSOI技术的两步SAR ADC
本文介绍了一种用于低功耗操作的部分交错1-GS/s 8位两步SAR ADC。提出了一种快速降噪技术,在不显著降低转换率的情况下提高功率效率。采用改良的StrongARM锁存器进一步降低比较器噪声。校准程序在后台运行,以解决不均匀的比较器偏移和级间增益误差。该原型ADC采用28纳米FDSOI工艺制造,在Nyquist下SNDR为46.65 dB,功耗为2.1 mW, Walden FOM为12.01 fJ/ v.-step。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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