A model for impulsive EMI effects caused by low voltage ESD

Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting Pub Date : 1993-10-02 DOI:10.1109/IAS.1993.299099

M. Honda

引用次数: 0

Abstract

A model for impulsive electromagnetic interference (EMI) effects caused by relatively low-voltage electrostatic discharge (ESD) on digital electronic systems is proposed. The power of impulsive EMI is governed by the product of the following three parameters: charged voltage, rise time of the discharge current, and susceptibility of the system.<>

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低压静电放电引起的脉冲电磁干扰效应模型

提出了一个相对低压静电放电(ESD)对数字电子系统产生脉冲电磁干扰(EMI)效应的模型。脉冲电磁干扰的功率由以下三个参数的乘积决定:充电电压、放电电流的上升时间和系统的磁化率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting

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