Charge Scavenging Gate Coupled Hierarchical Bitline Scheme for Ultra-Low Power SRAMs in 65nm LSTP CMOS

Mukesh Kumar Srivastav, Rimjhim, Govind Soni, Umang Mittal, Rupali Tewari, Riya Yadav, Anuj Grover, Kedar Janardan Dhori, Harsh Rawat
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引用次数: 1

Abstract

SRAMs consume a large share of power in an advanced SoC. Hierarchical bitlines are used to reduce power consumption. In this work, we compare a Charge Scavenging Gate Coupled (CSGC) Hierarchical Bitline Architecture with the Conventional Memory and Conventional Hierarchical Architecture. While Conventional Hierarchical architecture is more efficient for smaller memory capacity, we show that for large instances operating at low speeds, CSGC scheme can save up to 32% power over Conventional Memory architecture in 65nm LSTP CMOS technology. Also, it saves 15% more power than the Conventional Hierarchical scheme at an additional area overhead of 5%.
65纳米LSTP CMOS超低功耗sram的电荷清除门耦合分层位线方案
sram在高级SoC中消耗大量功率。分层位线用于降低功耗。在这项工作中,我们比较了电荷清除门耦合(CSGC)分层位线结构与传统存储器和传统分层结构。虽然传统的分层架构对于较小的内存容量更有效,但我们表明,对于低速运行的大型实例,CSGC方案可以在65nm LSTP CMOS技术下比传统内存架构节省高达32%的功耗。此外,它比传统的分层方案节省15%的电力,额外的面积开销为5%。
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