Behaviour Shockley and Sakurai Models in 7nm FinFet

Abstract

As we move towards lower nodes, device dimensions are changing and becoming more complex. With FinFet’s elevated channel, gate voltage is applied from all 3 directions. The gate electric field is no longer unidirectional. These add complexity in the behavior of current through the channel. Traditional Shockley model which had square law dependency on the over drive voltage in saturation region will no longer hold good. To overcome this shortcoming of the model alpha power model was introduced by Sakurai- Newton [1]. This accurately modeled the transistor behavior in submicron device in saturation region. According to this model the device will not have square dependency in saturation region. But will have power reduced from two to one as node shrinks. As we were scaling the nodes, there wasn’t any significant scaling in the voltage. As the velocity saturation becomes more dominant alpha reaches one. Models designed for the planar devices and are not in sync with the FinFet. Proposed paper describes the behavior of the MOS in 7nm across different voltage condition and comparison of the current behavior predicted from the Shockley’s square law model and Sakurai-Newton’s alpha power model in FinFets.