Power consumption analysis in static CMOS gates

Alberto Wiltgen, Kim A. Escobar, A. Reis, R. Ribas
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引用次数: 32

Abstract

This paper addresses the power consumption in CMOS logic gates through a study that considers the transistor network arrangement and the advance of the technology node. The relationship between charge/discharge and short-circuit dynamic power components are investigated through electrical simulations (SPICE). The static power dissipation is also analyzed. Experimental results demonstrate that dynamic power still remains the main source of consumption in standard cell designs, although the short-circuit component seems to decrease at the advancing of CMOS fabrication processes. The static power, on the other hand, keeps growing at each new technology node, becoming even more a critical challenge in VLSI design.
静态CMOS门的功耗分析
本文通过考虑晶体管网络布局和技术节点的进步,研究了CMOS逻辑门的功耗问题。通过电学模拟(SPICE)研究了充放电与短路动态功率元件之间的关系。并对其静态功耗进行了分析。实验结果表明,动态功率仍然是标准电池设计的主要消耗来源,尽管短路元件似乎随着CMOS制造工艺的进步而减少。另一方面,静态功耗在每个新技术节点上不断增长,成为VLSI设计中更加关键的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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