Parameterized models for a RF chip-to-substrate interconnect

I. Doerr, L. Hwang, G. Sommer, H. Oppermann, L. Li, M. Petras, S. Korf, F. Sahli, T. Myers, M. Miller, W. John
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引用次数: 28

Abstract

Skyrocketing growth in the cellular personal communications services (PCS) sector has fueled the needs for higher density, more functionality, and greater performance on both handset and base stations. Third generation wireless standards, which require hardware upgrades, loom on the horizon. RF component suppliers are scrambling to find solutions at the IC, package, and PCB levels to meet these challenges. RF module packaging is considered as one of the low cost solutions for the future wireless products. One of the critical design needs for RF interconnects is to understand the electrical performance of wire bond (the RF interconnect of choice) at and above frequency of interest, and to determine the performance limit for the wire bond chip-to-substrate interconnect. The availability of design kit or library would result in a substantial reduction in design cycle times. Using wire bond as example, this paper illustrates the developmental stages that turn electromagnetic characteristics of a physical structure into a design library. Fullwave simulation using Ansoft HFSS and compact models extraction using optimization tool for wire bond are shown, followed by in-depth discussions of wire bond parameterized models. Validation of parameterized model by measurement is presented.
射频芯片-衬底互连的参数化模型
蜂窝个人通信服务(PCS)领域的飞速增长推动了手机和基站对更高密度、更多功能和更高性能的需求。需要硬件升级的第三代无线标准即将问世。射频元件供应商正争先恐后地在IC、封装和PCB层面寻找解决方案来应对这些挑战。射频模块封装被认为是未来无线产品低成本解决方案之一。射频互连的关键设计需求之一是了解线键(所选择的射频互连)在目标频率及以上的电气性能,并确定线键芯片到衬底互连的性能极限。设计工具包或库的可用性将导致设计周期时间的大幅减少。本文以导线键合为例,阐述了将物理结构的电磁特性转化为设计库的发展阶段。介绍了基于Ansoft HFSS的全波仿真和基于优化工具的紧凑模型提取,并对线键参数化模型进行了深入讨论。给出了参数化模型的测量验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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