A low-phase-noise millimeter wave quadrature VCO in 180nm CMOS process

Z. Kashani, A. Nabavi
{"title":"A low-phase-noise millimeter wave quadrature VCO in 180nm CMOS process","authors":"Z. Kashani, A. Nabavi","doi":"10.1109/KBEI.2015.7436217","DOIUrl":null,"url":null,"abstract":"This paper presents a new circuit topology for a 58-GHz low phase noise quadrature voltage control oscillator (QVCO) in a standard 180nm CMOS technology. Selecting a low phase noise Colpitts oscillator core with low power consumption and improved phase noise performance, and using self-injection coupling result in a phase noise of -106 dBc/Hz at 1MHz offset of a 58GHZ carrier. The power consumption for the entire circuit, including the buffers and main cores, is 10.6mA from a 1.8V supply. This design has the lowest phase noise and better figure-of-merits compared to previous works.","PeriodicalId":168295,"journal":{"name":"2015 2nd International Conference on Knowledge-Based Engineering and Innovation (KBEI)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 2nd International Conference on Knowledge-Based Engineering and Innovation (KBEI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/KBEI.2015.7436217","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This paper presents a new circuit topology for a 58-GHz low phase noise quadrature voltage control oscillator (QVCO) in a standard 180nm CMOS technology. Selecting a low phase noise Colpitts oscillator core with low power consumption and improved phase noise performance, and using self-injection coupling result in a phase noise of -106 dBc/Hz at 1MHz offset of a 58GHZ carrier. The power consumption for the entire circuit, including the buffers and main cores, is 10.6mA from a 1.8V supply. This design has the lowest phase noise and better figure-of-merits compared to previous works.
一种180nm CMOS制程的毫米波正交压控振荡器
本文提出了一种适用于标准180nm CMOS技术的58 ghz低相位噪声正交压控振荡器(QVCO)的新电路拓扑结构。选择低功耗、提高相位噪声性能的低相位噪声Colpitts振荡器核心,并采用自注入耦合,在58GHZ载波1MHz偏移时相位噪声为-106 dBc/Hz。整个电路的功耗,包括缓冲器和主核心,在1.8V电源下为10.6mA。与以往的设计相比,该设计具有最低的相位噪声和更好的性能指标。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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