Evidence of fast and low-voltage A2RAM ‘1’ state programming

Abstract

For the first time, we demonstrate a new concept for programming the ‘1’ state in A2RAM based on the impact ionization in the bridge, which can be assisted by the band-to-band tunneling effect in the top part of the silicon film. This new programming method reduces the programming voltage and writing time, making the A2RAM suitable as 1T-DRAM. Evidenced through TCAD simulation, the feasibility in matrix environment is also demonstrated.