Resonant tunnelling diodes for digital circuit applications

W. Prost
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引用次数: 4

Abstract

The application of quantum tunnelling devices namely resonant tunnelling diodes for high-performance digital circuitry is presented. The reliability of devices based on III/V semiconductor heterostructures is demonstrated and the applicability of emerging Si/SiGe heterostructures is discussed. The potential breakthrough of this approach is attributed to a very successful implementation in advanced circuit architectures. The applicability of Linear Threshold Gate logic based on the monostable-bistable transition logic element (MOBILE) is discussed here as the presently most promising candidate.
用于数字电路的谐振隧穿二极管
介绍了量子隧穿器件即谐振隧穿二极管在高性能数字电路中的应用。论证了基于III/V半导体异质结构器件的可靠性,并讨论了新兴Si/SiGe异质结构的适用性。这种方法的潜在突破归功于在先进电路架构中非常成功的实现。本文讨论了基于单稳-双稳转换逻辑元件(MOBILE)的线性门限逻辑的适用性,认为这是目前最有前途的候选逻辑。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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