Numerical simulations of transferred-electron devices based on graded-gap semiconductor nitrides with boron nitride for terahertz range

Abstract

The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InBN and GaBN graded-gap semiconductor compounds at different BN distribution. We had obtained the output characteristics of diodes in a wide range of frequencies from 30 to 700 GHz. Cutoff frequency has been estimated. At optimal BN distribution graded-gap semiconductor InBN and GaBN Gunn diodes for efficiency exceed GaN and InN diodes by more than two times. Power consumption of gradedgap InBN and GaBN diodes is 11÷19% less the power consumption of InN and GaN diodes.